The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2025

Filed:

Aug. 15, 2023
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

François Ayel, Grenoble, FR;

Olivier Saxod, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 25/707 (2023.01); G01S 7/481 (2006.01); G01S 17/894 (2020.01); H04N 25/47 (2023.01); H04N 25/77 (2023.01);
U.S. Cl.
CPC ...
H04N 25/707 (2023.01); G01S 7/4816 (2013.01); G01S 17/894 (2020.01); H04N 25/47 (2023.01); H04N 25/77 (2023.01);
Abstract

An image sensor provided with a pixel including a photosensitive region formed in a semiconductor substrate and surrounded by a peripheral isolation trench; a sense node formed on a charge collecting region; a charge transfer gate around the sense node; a well; the pixel being provided with a so-called 'detection acceleration' transistor configured to, during a so-called “charge overflow detection” operation, be switched on so as to weaken a potential barrier generated by the transfer gate and thus to favour an overflow of photogenerated charges to the sense node of the photosensitive region and to accelerate detection of this overflow.


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