The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2025
Filed:
Aug. 09, 2023
Rohm Co., Ltd., Kyoto, JP;
Yuichi Shinozaki, Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
A gate drive circuit for a switching circuit including high-side and low-side transistors which are GaN-HEMTs (High Electron Mobility Transistors), includes: a high-side driver driving the high-side transistor; and a low-side driver driving the low-side transistor, wherein the low-side driver is configured to be capable of applying 0 V, a high-level voltage higher than a gate threshold voltage of the low-side transistor, and a bias voltage lower than the gate threshold voltage between a gate and a source of the low-side transistor, and the low-side driver is configured to apply the bias voltage between the gate and the source of the low-side transistor during a dead time inserted during transition from a high-level output state where the high-side transistor is turned on and the low-side transistor is turned off to a low-level output state where the high-side transistor is turned off and the low-side transistor is turned on.