The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2025
Filed:
Nov. 29, 2021
Applicant:
Rohm Co., Ltd., Kyoto, JP;
Inventors:
Assignee:
Rohm Co., Ltd., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/0814 (2006.01); H10D 30/66 (2025.01); H10D 62/10 (2025.01); H10D 84/00 (2025.01); H10D 84/80 (2025.01);
U.S. Cl.
CPC ...
H03K 17/08142 (2013.01); H10D 30/668 (2025.01); H10D 62/127 (2025.01); H10D 84/148 (2025.01); H10D 84/811 (2025.01);
Abstract
A semiconductor device includes: a split-gate transistor connected between a drain electrode (output electrode OUT) and a ground electrode and having a plurality of individually controllable channel regions; an active clamp circuit configured to limit the output voltage VOUT appearing at the output electrode to a clamp voltage or below; and a gate control circuit configured to raise the ON resistance of the split-gate transistor gently (or stepwise) after the split-gate transistor is switched from the ON state to the OFF state before the active clamp circuit limits the output voltage VOUT.