The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2025

Filed:

Jun. 25, 2020
Applicant:

Rf360 Singapore Pte. Ltd., Republic Plaza, SG;

Inventors:

Matthias Knapp, Munich, DE;

Manuel Sabbagh, Dorfen, DE;

Gholamreza Dadgar Javid, Munich, DE;

Assignee:

RF360 Singapore Pte. Ltd., Republic Plaza, SG;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/02 (2006.01); H03H 9/145 (2006.01); H03H 9/25 (2006.01); H03H 9/64 (2006.01); H03H 9/72 (2006.01);
U.S. Cl.
CPC ...
H03H 9/02574 (2013.01); H03H 9/02559 (2013.01); H03H 9/145 (2013.01); H03H 9/25 (2013.01); H03H 9/6483 (2013.01); H03H 9/725 (2013.01);
Abstract

A SAW resonator with reduced spurious modes is provided. The resonator comprises a (111) silicon carrier substrate (CS), an electrode structure (ES) and a piezoelectric layer (PIL). The carrier substrate has a crystal orientation with the Euler angles (−45°±10°; −54°±10°; 60°±30°) and the piezoelectric layer comprises LiTaOand has a crystal orientation with the Euler angles (0°; 56°±8°; 0°). There may be intermediate layers (IL, IL) of SiOand amorphous or polycrystalline materials. In addition a silicon nitride layer is provided as passivation (PAL). Electrodes are made of aluminum. Thicknesses of all layers are selected in particular ranges to optimize SAW behaviour.


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