The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2025

Filed:

Aug. 12, 2019
Applicants:

Lg Electronics Inc., Seoul, KR;

University-industry Cooperation Group of Kyung Hee University, Yongin-si, KR;

Inventors:

Jaegwang Um, Seoul, KR;

Sunghwan Kim, Seoul, KR;

Jin Jang, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/075 (2006.01); H01L 25/16 (2023.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 64/23 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10K 59/12 (2023.01);
U.S. Cl.
CPC ...
H01L 25/0753 (2013.01); H01L 25/167 (2013.01); H10D 30/031 (2025.01); H10D 30/6729 (2025.01); H10D 30/6755 (2025.01); H10D 64/258 (2025.01); H10D 86/411 (2025.01); H10D 86/60 (2025.01); H10K 59/12 (2023.02);
Abstract

Discussed is a display device including a substrate, a thin film transistor formed on the substrate, the thin film transistor including a source electrode, a drain electrode, and a gate electrode, and a plurality of semiconductor light emitting devices emitting light so as to each form individual pixels and each having a p-type electrode and an n-type electrode, wherein at least one of the plurality of of the semiconductor light emitting devices is disposed so that one of the p-type electrode and the n-type electrode overlaps the source electrode of the thin film transistor.


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