The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2025
Filed:
Jan. 13, 2023
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Jonas Höhenberger, Kissing, DE;
Gernot Biese, Marzling, DE;
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/76 (2006.01); H01L 23/544 (2006.01);
U.S. Cl.
CPC ...
H01L 23/564 (2013.01); H01L 21/76 (2013.01); H01L 23/544 (2013.01); H01L 2223/54406 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/5446 (2013.01);
Abstract
A semiconductor device wafer includes a plurality of device patterns formed in or over a semiconductor substrate, and a scribe area from which the device patterns are excluded. A plurality of dummy features are located in at least one material level in the scribe area, including over laser scribe dots formed in the semiconductor substrate.