The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2025

Filed:

Mar. 03, 2022
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Tadashi Iguchi, Mie, JP;

Natsuki Fukuda, Mie, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/535 (2006.01); H01L 23/528 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H01L 23/535 (2013.01); H01L 23/5283 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02);
Abstract

A semiconductor storage device includes a substrate having a memory region and a hook-up region arranged in a first direction and memory structures arranged in a second direction. The memory structures include conductive layers arranged in a third direction and extending in the first direction over the memory region and the hook-up region and contact electrodes provided in the hook-up region and extending in the third direction to have an outer peripheral surface surrounded, each contact electrode being connected to any of the conductive layers. The hook-up region includes a first region, with a first contact electrode and a second contact electrode, and a second region, with a third contact electrode and a fourth contact electrode. In the third direction, a first average length of the first and second electrodes is equal to a second average length of the third and fourth contact electrodes.


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