The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2025

Filed:

Apr. 05, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Junyoung Choi, Seoul, KR;

Youngwoo Kim, Seoul, KR;

Taehoon Kim, Seoul, KR;

Sangyeon Han, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 23/53295 (2013.01); H10B 12/315 (2023.02); H10B 12/50 (2023.02); H01L 23/5226 (2013.01); H10B 12/0335 (2023.02);
Abstract

A semiconductor device includes a substrate including a cell region and a peripheral circuit region; a conductive structure on the cell region and the peripheral circuit region, the conductive structure extending in a first direction parallel to an upper surface of the substrate; a gate structure on the peripheral circuit region, the gate structure spaced apart from the conductive structure in the first direction; a spacer contacting a sidewall of the gate structure; and a first capping pattern contacting a sidewall of an end portion in the first direction of the conductive structure and a sidewall of the spacer, wherein the spacer and the first capping pattern include different insulating materials.


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