The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2025
Filed:
Sep. 09, 2022
Shandong University, Shandong, CN;
Yanshan University, Hebei, CN;
Chuanzhen Huang, Qinhuangdao, CN;
Xuefei Liu, Jinan, CN;
Hanlian Liu, Jinan, CN;
Peng Yao, Jinan, CN;
Hongtao Zhu, Jinan, CN;
Bin Zou, Jinan, CN;
Dun Liu, Jinan, CN;
Jun Wang, Jinan, CN;
Zhen Wang, Qinhuangdao, CN;
Longhua Xu, Qinhuangdao, CN;
Shuiquan Huang, Qinhuangdao, CN;
SHANDONG UNIVERSITY, Jinan, CN;
YANSHAN UNIVERSITY, Qinhuangdao, CN;
Abstract
A monocrystalline silicon micro-nano dual-scale anti-reflection texture and a preparation method therefor. The preparation method combines nanosecond-laser-assisted waterjet near-damage-free processing and femtosecond laser scanning, and subsurface damage caused by a re-cast layer phenomenon and a hot crack in a monocrystalline silicon laser texturing process can be effectively reduced by combining a nanosecond-laser-assisted waterjet near-damage-free processing technology and an ultra-short pulse femtosecond laser cold processing technology; and meanwhile, a micro-scale frame structure and a nano-scale structure can be flexibly modified respectively by adjusting nanosecond-laser-assisted waterjet technological parameters and femtosecond laser technological parameters, a geometry light trapping effect and an effective dielectric effect can be achieved in a micro-nano dual-scale hybrid structure at the same time, and surface reflection is reduced.