The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Nov. 27, 2023
Applicant:
Western Digital Technologies, Inc., San Jose, CA (US);
Inventors:
Jeffrey Lille, Sunnyvale, CA (US);
Nathan Franklin, San Jose, CA (US);
Assignee:
Sandisk Technologies, Inc., Milpitas, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G11C 5/08 (2006.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10N 50/10 (2023.02); G11C 5/08 (2013.01); G11C 11/161 (2013.01); G11C 11/1673 (2013.01); H10N 50/01 (2023.02); H10N 50/80 (2023.02);
Abstract
A spin-orbit-torque (SOT) memory cell includes a first electrode embedded in dielectric material layers overlying a substrate; a magnetic-tunnel-junction-containing (MTJ-containing) pillar structure contacting a top surface of the first electrode and including a pinned layer and a free layer that overlies the pinned layer; a spin current metal line including a center portion that contacts the MTJ-containing pillar structure; and a selector element electrically connected to a first end of the spin current metal line.