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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12376451 B1

PDFFull Text
Date of Patent:
Jul. 29, 2025

Filed:

Sep. 26, 2022

Light-emitting device and fabrication method thereof

Applicant:

Tcl Technology Group Corporation, Huizhou, CN;

Inventors:

Zitong Ao, Huizhou, CN;

Yiran Yan, Huizhou, CN;

Fan Yang, Huizhou, CN;

Xuesen Lai, Huizhou, CN;

Assignee:

TCL TECHNOLOGY GROUP CORPORATION, Huizhou, CN;

Attorney:

ANOVA LAW GROUP, PLLC

Primary Examiner:

Anthony Ho

Int. Cl.
CPC ...
H10K 50/852 (2023.01); H10K 50/15 (2023.01); H10K 50/16 (2023.01); H10K 50/17 (2023.01); H10K 71/00 (2023.01); H10K 85/40 (2023.01); H10K 85/60 (2023.01); H10K 50/818 (2023.01); H10K 102/00 (2023.01); H10K 102/10 (2023.01);
U.S. Cl.
CPC ...
H10K 50/852 (2023.02); H10K 50/15 (2023.02); H10K 50/16 (2023.02); H10K 50/17 (2023.02); H10K 71/00 (2023.02); H10K 85/40 (2023.02); H10K 85/631 (2023.02); H10K 85/654 (2023.02); H10K 85/6565 (2023.02); H10K 85/6576 (2023.02); H10K 50/818 (2023.02); H10K 2102/00 (2023.02); H10K 2102/102 (2023.02); H10K 2102/351 (2023.02);
Abstract

A fabrication method for a light-emitting device includes providing a hole functional layer disposed between a quantum dot light-emitting layer and an anode, and providing an electron functional layer disposed between the quantum dot light-emitting layer and a cathode. The hole functional layer includes a mixed material of a hole transport material and a hole injection material. A thickness of the hole functional layer being selected from a thickness range corresponding to ⅓˜⅔ of abscissa between an origin and a first positive trough in a cavity standing wave of the mixed material. The absolute value of a difference between a thickness of the electron functional layer and a thickness corresponding to a first positive crest of a cavity standing wave of an electron functional material is less than or equal to 5 nm.

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