The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Sep. 13, 2022
Applicant:
Commissariat À L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
Bertrand Szelag, Grenoble, FR;
Laetitia Adelmini, Grenoble, FR;
Assignee:
Commissariat à l'Energie Atomique et aux Energies, Alternatives Paris, FR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H10H 20/01 (2025.01);
U.S. Cl.
CPC ...
H10H 20/0133 (2025.01);
Abstract
The invention relates to a process for fabricating a semiconductor diode () via transfer of a semiconductor stack () then local etching to form a semiconductor pad (), the production of the semiconductor pad () comprising a plurality of sequences comprising a dry etch that leaves a residual segment (), formation of a hard-mask spacer (), then a wet etch of the residual segment ().