The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2025

Filed:

Apr. 21, 2022
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Yun Hui Yang, Icheon-si, KR;

Ji Suk Park, Icheon-si, KR;

Tae Yang Lee, Icheon-si, KR;

Assignee:

SK HYNIX INC., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/00 (2025.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H10F 39/809 (2025.01); H01L 23/481 (2013.01); H10F 39/811 (2025.01);
Abstract

An image sensing device includes a first substrate including a first front surface and a first back surface, a first interlayer insulation layer disposed below the first front surface and including a first interconnect, a second substrate including a second front surface and a second back surface, a second interlayer insulation layer disposed over the second front surface and below the first interlayer insulation layer to be in contact with the first interlayer insulation layer, and including a second interconnect, a first TSV disposed in a through hole formed by penetrating the first substrate and the first interlayer insulation layer and by etching of a portion of the second interlayer insulation layer, and electrically connecting the first interconnect to the second interconnect, and a passivation layer formed to cover the first TSV. An upper end of the first TSV is located at a height lower than the first back surface.


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