The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Apr. 22, 2022
SK Hynix Inc., Icheon-si, KR;
Ken Sawada, Tokyo, JP;
SK HYNIX INC., Icheon-si, KR;
Abstract
An image sensing device includes a first substrate layer including a photoelectric conversion region for converting incident light into photocharges and a floating diffusion region for storing the photocharges therein, a first interconnect layer disposed over the first substrate layer and including a switch transistor gate overlapping at least a portion of the floating diffusion region, a second substrate layer disposed over the first interconnect layer, a second interconnect layer disposed over the second substrate layer, and a capacitor electrically coupled to the floating diffusion region by the switch transistor gate. The capacitor includes first and second electrodes that are disposed across the first interconnect layer, the second substrate layer, and the second interconnect layer, wherein a portion of the first interconnect layer, a portion of the second substrate layer, and a portion of the second interconnect layer are disposed between the first electrode and the second electrode.