The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2025

Filed:

Jun. 16, 2022
Applicant:

Japan Display Inc., Tokyo, JP;

Inventor:

Hiroyuki Abe, Tokyo, JP;

Assignee:

Japan Display Inc., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); G06V 40/13 (2022.01); H01L 31/105 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14603 (2013.01); G06V 40/1318 (2022.01); H01L 27/14612 (2013.01); H01L 27/14645 (2013.01); H01L 31/1055 (2013.01);
Abstract

According to an aspect, a detection device includes: a substrate; photoelectric conversion elements arranged on the substrate; transistors that each include a semiconductor layer and a gate electrode facing the semiconductor layer and are provided for each photoelectric conversion element; and a first electrode and a second electrode that are provided between the substrate and the photoelectric conversion elements in a direction orthogonal to the substrate and face each other with an insulating film interposed therebetween. The first electrode includes main parts that overlap the respective photoelectric conversion elements and a coupling part couples together adjacent main parts of the main parts. The second electrode is formed to have an island pattern for each photoelectric conversion element. The first electrode is located in the same layer as that of the gate electrode. The second electrode is located in the same layer as that of the semiconductor layer.


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