The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Mar. 15, 2022
Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;
Yoshihiro Sato, Osaka, JP;
Takayoshi Yamada, Hyogo, JP;
Abstract
An imaging device includes a pixel. The pixel includes a charge accumulator containing an impurity of a first conductivity type, a first transistor, a second transistor, a first well region containing an impurity of a second conductivity type, and a second well region containing an impurity of the first conductivity type. The charge accumulator accumulates charge generated through photoelectric conversion. The first transistor includes a first gate electrode and a first diffusion region containing an impurity of the first conductivity type. The second transistor includes a second gate electrode and a second diffusion region containing an impurity of the second conductivity type. The first transistor and the charge accumulator are located in the first well region, and the second transistor is located in the second well region. A distance between the charge accumulator and the second transistor is larger than a distance between the charge accumulator and the first transistor.