The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2025

Filed:

Aug. 25, 2022
Applicant:

Seiko Epson Corporation, Tokyo, JP;

Inventor:

Shinsuke Fujikawa, Chino, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 89/60 (2025.01); G01K 7/01 (2006.01); H01L 21/3205 (2006.01); H10D 84/00 (2025.01); H10D 86/60 (2025.01);
U.S. Cl.
CPC ...
H10D 89/911 (2025.01); G01K 7/01 (2013.01); H01L 21/3205 (2013.01); H10D 84/00 (2025.01); H10D 86/60 (2025.01); H10D 89/611 (2025.01);
Abstract

An electro-optical device includes a temperature detecting element and an electrostatic protection circuit configured to protect the temperature detecting element from a surge current. The electrostatic protection circuit includes a transistor electrically connected to the temperature detecting element in parallel, a first capacitance element electrically connected to the transistor, and a resistance element electrically connected to the first capacitance element in parallel. The electrostatic capacity of the first capacitance element is greater than a gate capacity between a gate electrode and a semiconductor layer that constitutes the transistor. In addition, a dielectric layer of the first capacitance element is thicker than a gate insulating film of the transistor.


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