The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2025

Filed:

May. 13, 2022
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Santosh Menon, Portland, OR (US);

Radim Spetik, Roznov pod Radhostem, CZ;

Bruce Blair Greenwood, Gresham, OR (US);

Robert Davis, Cranston, RI (US);

Ladislav Seliga, Francova Lhota, CZ;

Michael J. Seddon, Gilbert, AZ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/66 (2025.01); H01L 21/768 (2006.01); H01L 23/64 (2006.01); H10D 30/01 (2025.01); H10D 64/00 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 30/668 (2025.01); H01L 21/76877 (2013.01); H01L 23/647 (2013.01); H10D 30/0297 (2025.01); H10D 64/118 (2025.01); H10D 64/516 (2025.01);
Abstract

A method includes forming a plurality of pockets of semiconductor material in a semiconductor substrate. The plurality of pockets are electrically isolated from the semiconductor substrate. The method further involves forming a metal-oxide-semiconductor field-effect transistor (MOSFET) in a pocket of the plurality of pockets, the MOSFET being a vertical trench shielded gate MOSFET. The method further includes forming an electrical connection to a drain region of the MOSFET vertically below a trench and a mesa of the MOSFET.


Find Patent Forward Citations

Loading…