The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Feb. 09, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jong Pil Kim, Seoul, KR;
Wook Hyun Kwon, Yongin-si, KR;
Abstract
The present disclosure provides a semiconductor device with improved element performance and reliability. The semiconductor device includes a lower insulating layer, a fin-shaped insulating layer that is on the lower insulating layer and extends in a first direction, a field insulating layer that is on the lower insulating layer and extends in the first direction, a plurality of gate structures that are on the fin-shaped insulating layer and include a gate electrode intersecting the fin-shaped insulating layer, a source/drain region that is on the fin-shaped insulating layer and is between the gate structures, and an active pattern that is on the fin-shaped insulating layer and penetrates the gate electrode and is electrically connected to the source/drain region, where the gate electrode extends in a second direction intersecting the first direction.