The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Mar. 03, 2021
Applicant:
Guangdong Zhineng Technology Co., Ltd., Guangdong, CN;
Inventor:
Zilan Li, Guangdong, CN;
Assignee:
GUANGDONG ZHINENG TECHNOLOGY CO., LTD., Guangdong, CN;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 21/02 (2006.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 62/824 (2025.01); H10D 62/85 (2025.01);
U.S. Cl.
CPC ...
H10D 30/477 (2025.01); H01L 21/02381 (2013.01); H01L 21/0243 (2013.01); H01L 21/0254 (2013.01); H01L 21/02645 (2013.01); H10D 30/015 (2025.01); H10D 62/824 (2025.01); H10D 62/8503 (2025.01);
Abstract
The present disclosure provides a non-planar hole channel transistor and a fabrication method thereof. The non-planar hole channel transistor has a substrate, and a surface of the substrate has a step structure comprising a vertical surface. A non-planar channel layer is epitaxially grown laterally with the vertical surface as a core. A barrier layer is formed on the channel layer, so as to simultaneously form a two-dimensional hole gas and/or a two-dimensional electron gas at an interface between the barrier layer and the channel layer.