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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12376324 B1

PDFFull Text
Date of Patent:
Jul. 29, 2025

Filed:

Mar. 03, 2021

Non-planar two-dimensional electron gas (2deg) or two-dimensional hole gas (2dhg) including epitaxially growing an n-type buried layer between first channel and second channel and a method of forming the same

Applicant:

Guangdong Zhineng Technology Co., Ltd., Guangdong, CN;

Inventor:

Zilan Li, Guangdong, CN;

Assignee:

GUANGDONG ZHINENG TECHNOLOGY CO., LTD., Guangdong, CN;

Attorneys:

ArentFox Schiff LLP

Yun H. Choe

Primary Examiner:

Anh D Mai

Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 21/02 (2006.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 62/824 (2025.01); H10D 62/85 (2025.01);
U.S. Cl.
CPC ...
H10D 30/477 (2025.01); H01L 21/02381 (2013.01); H01L 21/0243 (2013.01); H01L 21/0254 (2013.01); H01L 21/02645 (2013.01); H10D 30/015 (2025.01); H10D 62/824 (2025.01); H10D 62/8503 (2025.01);
Abstract

The present disclosure provides a non-planar hole channel transistor and a fabrication method thereof. The non-planar hole channel transistor has a substrate, and a surface of the substrate has a step structure comprising a vertical surface. A non-planar channel layer is epitaxially grown laterally with the vertical surface as a core. A barrier layer is formed on the channel layer, so as to simultaneously form a two-dimensional hole gas and/or a two-dimensional electron gas at an interface between the barrier layer and the channel layer.

Find Patent Forward Citations

Li, Zilan. (2025). Non-planar two-dimensional electron gas (2deg) or two-dimensional hole gas (2dhg) including epitaxially growing an n-type buried layer between first channel and second channel and a method of forming the same (U.S. Patent No. 12376324). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12376324

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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