The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Jan. 14, 2025
Huazhong University of Science and Technology, Wuhan, CN;
Huazhong University of Science and Technology, Wuhan, CN;
Abstract
Provided is a design method for a threshold switch device, a threshold switch device, and a dynamic memory, relating to the technical field of memories. The design method includes: testing a hold voltage, a low-resistance-state (LRS) resistance, and a threshold voltage of a threshold switch function layer; determining a target hold voltage of a threshold switch device according to the threshold voltage; determining a resistance sum of a top electrode and a bottom electrode of the threshold switch device according to the hold voltage and the LRS resistance of the threshold switch function layer and the target hold voltage of the threshold switch device; and selecting materials and thin film parameters of the top electrode and the bottom electrode according to the resistance sum of the top electrode and the bottom electrode of the threshold switch device, to design the threshold switch device meeting the target hold voltage.