Three-dimensional memory device with intermetallic barrier liner and methods for forming the same

Abstract

A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, memory openings vertically extending through the alternating stack, and memory opening fill structures located in the memory openings. Each of the memory opening fill structures includes a vertical stack of memory elements located at levels of the electrically conductive layers. Each of the electrically conductive layers includes a metallic barrier liner containing an intermetallic compound of at least two elements that includes a first metal element including Ta or Ti, and a second metal element including at least one of Al or Mo, and metallic barrier liner containing less than 10 atomic percent of nitrogen and oxygen, and a metallic fill material layer contacting the metallic barrier liner.