The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Nov. 14, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Hyuncheol Kim, Seoul, KR;
Yongseok Kim, Suwon-si, KR;
Kyunghwan Lee, Suwon-si, KR;
Minjun Lee, Seoul, KR;
Daewon Ha, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
A memory device is provided. The memory device includes a substrate, a fin structure on the substrate, a gate structure on the fin structure, a first source/drain at one end of the fin structure, and a second source/drain at the other end of the fin structure, wherein the gate structure includes a trap layer, a blocking layer, and a gate electrode layer sequentially stacked on the fin structure, the first source/drain is doped with or has incorporated therein dopants of a first conductivity-type, and the second source/drain is doped with or has incorporated therein dopants of a second conductivity-type dopants that are different from the dopants of the first conductivity-type.