Memory device using dynamic flash memory cells

Abstract

A memory device includes a page constituted by multiple memory cells arranged in a row form on a substrate, and performs a page write operation of controlling voltages to be applied to first and second gate conductor layers and first and second impurity layers of each memory cell included in the page to hold a positive hole group formed by an impact ionization phenomenon inside a channel semiconductor layer; During a page read operation, page data of a memory cell group selected with the word line is read to the sense amplifier circuit, and a refresh operation is performed at least once before the page read operation to hold a positive hole group formed by an impact ionization phenomenon inside a channel semiconductor layer.