The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2025

Filed:

Oct. 17, 2023
Applicant:

Omnivision Technologies, Inc., Santa Clara, CA (US);

Inventors:

Yuanliang Liu, Santa Clara, CA (US);

Bill Phan, Santa Clara, CA (US);

Duli Mao, Santa Clara, CA (US);

Assignee:

OMNIVISION TECHNOLOGIES, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 25/59 (2023.01); H04N 25/709 (2023.01); H04N 25/77 (2023.01);
U.S. Cl.
CPC ...
H04N 25/59 (2023.01); H04N 25/709 (2023.01); H04N 25/77 (2023.01);
Abstract

Image sensors with improved memory effect are disclosed herein. In one embodiment, a method for reducing image lag associated with a pixel included in a plurality of pixels is described. The pixel includes a photodiode, a first floating diffusion coupled to the photodiode through a transfer transistor, a second floating diffusion coupled to the first floating diffusion through a dual floating diffusion transistor, and a lateral overflow integration capacitor coupled between the second floating diffusion and a bias voltage source. The lateral overflow integration capacitor is further coupled to a pixel reference voltage source through a reset transistor. Operation of the pixel comprises an idle period and an integration period after the idle period. The method also includes configuring the lateral overflow integration capacitor to be either zero-biased or forward-biased during the idle period.


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