The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2025

Filed:

Oct. 03, 2023
Applicants:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Samsung Sdi Co., Ltd., Yongin-si, KR;

Inventors:

Inhyuk Son, Yongin-si, KR;

Mijong Kim, Suwon-si, KR;

Jumyeung Lee, Suwon-si, KR;

Minwoo Lim, Hwaseong-si, KR;

Junghyun Choi, Yongin-si, KR;

Sungsoo Han, Hwaseong-si, KR;

Assignees:

SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;

SAMSUNG SDI CO., LTD., Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01M 4/02 (2006.01); H01M 4/04 (2006.01); H01M 4/134 (2010.01); H01M 4/1393 (2010.01); H01M 4/1395 (2010.01); H01M 4/36 (2006.01); H01M 4/38 (2006.01); H01M 4/583 (2010.01); H01M 4/62 (2006.01); H01M 10/0525 (2010.01); H01M 10/0565 (2010.01);
U.S. Cl.
CPC ...
H01M 4/625 (2013.01); H01M 4/02 (2013.01); H01M 4/0471 (2013.01); H01M 4/134 (2013.01); H01M 4/1393 (2013.01); H01M 4/1395 (2013.01); H01M 4/362 (2013.01); H01M 4/364 (2013.01); H01M 4/366 (2013.01); H01M 4/38 (2013.01); H01M 4/386 (2013.01); H01M 4/583 (2013.01); H01M 10/0525 (2013.01); H01M 10/0565 (2013.01); H01M 2004/027 (2013.01);
Abstract

A porous silicon composite includes: a porous core including a porous silicon composite secondary particle; and a shell disposed on a surface of the porous core and surrounding the porous core, wherein the porous silicon composite secondary particle includes an aggregate of silicon composite primary particles, each including silicon, a silicon suboxide on a surface of the silicon, and a first graphene on a surface of the silicon suboxide, wherein the shell include a second graphene, and at least one of the first graphene and the second graphene includes at least one element selected from nitrogen, phosphorus, and sulfur.


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