The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2025

Filed:

Aug. 05, 2022
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Adrian Lis, Regensburg, DE;

Ewald Guenther, Regenstauf, DE;

Thomas Schmid, Regensburg, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/07 (2006.01); H01L 21/66 (2006.01); H01L 23/00 (2006.01); H01L 23/373 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/072 (2013.01); H01L 22/22 (2013.01); H01L 23/3735 (2013.01); H01L 24/48 (2013.01); H01L 25/50 (2013.01); H01L 2224/48225 (2013.01);
Abstract

A power module includes: a first substrate having a patterned first metallization; a second substrate vertically aligned with the first substrate and having a patterned second metallization that faces the patterned first metallization; first vertical power transistor dies having a drain pad attached to a first island of the patterned first metallization and a source pad electrically connected to a first island of the patterned second metallization via first spacers; and second vertical power transistor dies having a source pad electrically connected to the first island of the patterned first metallization via second spacers. A first subset of the second vertical power transistor dies has a drain pad attached to a second island of the patterned second metallization. A second subset of the second vertical power transistor dies has a drain pad attached to a third island of the patterned second metallization. A method of producing the module is described.


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