The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
May. 11, 2022
Applicant:
Newport Fab, Llc, Newport Beach, CA (US);
Inventors:
Oleg Martynov, Lebanon, NH (US);
Edward Preisler, San Clemente, CA (US);
William Krieger, Portland, OR (US);
Assignee:
Newport Fab, LLC, Newport Beach, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/12 (2006.01); H01L 23/00 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); G02B 6/12 (2013.01); G02B 2006/12061 (2013.01); H01L 23/298 (2013.01); H01L 23/3171 (2013.01);
Abstract
A stress-reduced silicon photonics semiconductor wafer includes a silicon nitride layer on a backside of the wafer. At least one silicon nitride stress-reduction configuration is on a topside of the wafer. At least one silicon nitride photonics device is also on the topside of the wafer. A silicon photonics device can be situated in the wafer.