The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Apr. 01, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Saehan Park, Clifton Park, NY (US);
Seungyoung Lee, Clifton Park, NY (US);
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
Provided is a semiconductor architecture having a metal-oxide-semiconductor field-effect transistor (MOSFET) cell, the semiconductor architecture including a first semiconductor device included in the MOSFET cell, a second semiconductor device included in the MOSFET cell, the second semiconductor device being provided above the first semiconductor device, a first power rail configured to supply power to the first semiconductor device, the first power rail being provided at a vertical level different from the first semiconductor device and the second semiconductor device, and a second power rail configured to supply power to the second semiconductor device, the second power rail being provided at a vertical level between the first semiconductor device and the second semiconductor device.