The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Sep. 29, 2020
Hitachi High-tech Corporation, Tokyo, JP;
Masaki Yamada, Tokyo, JP;
Hitachi High-Tech Corporation, Tokyo, JP;
Abstract
Provided is an etching apparatus or an etching method which improves a processing yield in etching a film formed of SiO. As means therefor, a semiconductor manufacturing apparatus, which includes an introduction port through which a processing gas containing respective vapors of hydrogen fluoride and an alcohol is introduced into a processing chamber inside a processing vessel, a sample table which is arranged in the processing chamber and on which a wafer to be processed is placed on an upper surface thereof, and an electrode which is arranged inside the sample table, and, when etching a first film formed on the upper surface of the wafer, configured to apply DC power that forms an electric field on a first layer formed on the upper surface of the wafer by the processing gas, is used.