The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Sep. 01, 2022
Honeywell International Inc., Charlotte, NC (US);
Yong-Fa Alan Wang, McKinney, TX (US);
Thuy-Doan Pham, Allen, TX (US);
HONEYWELL INTERNATIONAL INC., Charlotte, NC (US);
Abstract
A fabrication method for protecting an electrical component on a semiconductor device when subjected to exposure to highly energized electrons, such as those emitted during e-beam irradiation, is provided. An example method may include doping one or more lead-out regions providing an electrical connection to the electrical component of the semiconductor device. In addition, the method may further include forming the electrical component to electrically connect to at least one of the one or more lead-out regions by doping the surface of the semiconductor substrate with a second dopant. Further, the method may include forming a protective barrier on the surface of the semiconductor substrate, substantially aligned with the one or more lead-out regions. The method may further comprise creating one or more cap regions substantially covering the entire surface of the semiconductor except for the lead-out regions by doping the surface of the semiconductor with a third dopant.