The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Apr. 26, 2024
Applicant:
Soitec, Bernin, FR;
Inventor:
Young-Pil Kim, Grenoble, FR;
Assignee:
Soitec, Bernin, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/24 (2006.01); C23C 16/26 (2006.01); C23C 16/44 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02658 (2013.01); C23C 16/24 (2013.01); C23C 16/26 (2013.01); C23C 16/4404 (2013.01); C23C 16/4405 (2013.01); H01L 21/02238 (2013.01);
Abstract
A support for a semiconductor structure comprises a base substrate and a charge trapping layer on the base substrate. The charge trapping layer comprises an alternating stack of at least one polycrystalline charge trapping material and at least one polycrystalline interlayer. The charge trapping material has a grain size between 100 nanometers (nm) and 1000 nm, and/or a lattice parameter greater than a lattice parameter of the at least one interlayer. Also disclosed is a semiconductor structure comprising such support.