The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Jun. 07, 2022
Hitachi High-tech Corporation, Tokyo, JP;
Haixiang Huang, Tokyo, JP;
Kenichi Kuwahara, Tokyo, JP;
HITACHI HIGH-TECH CORPORATION, Tokyo, JP;
Abstract
A plasma processing apparatus for controlling a length of a first output duration of a microwave power and a length of a second output duration to obtain a desired etching rate distribution of a wafer, in which one cycle of pulse modulation includes a first output duration of a microwave output and a second output duration having a finite value smaller than the first output, and an OFF duration. An etching rate distribution is a concave distribution for the first output and a convex distribution for the second output, and a control device controls a pulse generator such that when the etching rate distribution is the concave distribution, a length of the first output duration is longer than a length of the second output duration, and when the etching rate distribution is the convex distribution, the length of the first output duration is shorter than the length of the second output duration.