The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2025

Filed:

Jun. 07, 2023
Applicant:

Magnachip Mixed-signal, Ltd., Cheongju-si, KR;

Inventors:

Hyoung Kyu Kim, Cheongju-si, KR;

Il Jun Kim, Cheongju-si, KR;

Kwon Young Oh, Cheongju-si, KR;

Sang Ho Lee, Cheongju-si, KR;

Assignee:

Magnachip Mixed-Signal, Ltd., Cheongju-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/12 (2006.01); G11C 17/18 (2006.01);
U.S. Cl.
CPC ...
G11C 17/18 (2013.01);
Abstract

A power source switching circuit for a memory device includes: a first power source voltage terminal for supplying a first power source voltage, a second power source voltage terminal for supplying a second power source voltage, a first metal-oxide-semiconductor field-effect transistor (MOSFET) and a second MOSFET connected in series with the first power source voltage terminal, a first level shifter connected to the first MOSFET and supplied with the first power source voltage, a second level shifter connected to the second MOSFET and supplied with the second power source voltage, a third MOSFET connected to the second MOSFET, and a third level shifter connected to the third MOSFET and supplied with a third power source voltage, and a memory cell of a non-volatile memory is programmed using the first power source voltage or the second power source voltage.


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