The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2025

Filed:

Jul. 13, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Daekun Yoon, Suwon-si, KR;

Seok Ju Yun, Hwaseong-si, KR;

Sang Joon Kim, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G06F 7/544 (2006.01); G11C 11/54 (2006.01); G11C 16/34 (2006.01); G11C 16/30 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3404 (2013.01); G06F 7/5443 (2013.01); G11C 11/54 (2013.01); G11C 16/10 (2013.01); G11C 16/3459 (2013.01); G11C 16/3481 (2013.01); G11C 16/30 (2013.01);
Abstract

A method and apparatus with flash memory control are provided. The method includes performing first programming on a target memory cell of a cell array while adjusting a first programming time and a programming voltage, when a cell current of the target memory cell is determined to satisfy a primary target in association with the first programming, performing second programming on the target memory cell while adjusting a second programming time, and when the cell current of the target memory cell is determined to satisfy a secondary target in association with the second programming, terminating programming on the target memory cell.


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