Optimized read current consumption based on lower page read information for non-volatile memory apparatus

Abstract

A memory apparatus and method of operation are provided. The apparatus includes memory cells disposed in memory holes connected to bit lines. The memory cells retain a threshold voltage corresponding to data states. A control means applies a bit line voltage to the bit lines while determining whether the memory cells have the threshold voltage above one or more read levels associated with each of the data states in a first portion of a read operation. The control means groups the memory cells targeted for ones of the data states into data state groups based on the first portion of the read operation. The control means also supplies a near zero voltage to the bit lines coupled to the memory cells targeted for ones of the data states associated with at least one of the data state groups while reading the memory cells in subsequent portions of the read operation.