The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2025

Filed:

Aug. 28, 2023
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Sumiko Domae, Yokohama, JP;

Kyosuke Sano, Kamakura, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/08 (2006.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
G11C 16/08 (2013.01); G11C 16/0483 (2013.01); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02);
Abstract

A semiconductor memory device according to an embodiment includes: a driver for supplying a voltage, the driver in the first step, when a current flows through the first substring, the second substring, the third substring, or the fourth substring, performing a second step of applying the first voltage to the bit line, applying a fourth voltage higher than the third voltage to the third select gate line, the fourth select gate line, the fifth select gate line, and the sixth select gate line, and applying a fifth voltage higher than the third voltage and lower than the fourth voltage to the first word lines and the second word lines.


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