The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2025

Filed:

Oct. 06, 2023
Applicants:

Imec Vzw, Leuven, BE;

Katholieke Universiteit Leuven, Leuven, BE;

Inventors:

Francky Catthoor, Temse, BE;

Dawit Burusie Abdi, Leuven, BE;

Assignees:

IMEC VZW, Leuven, BE;

Katholieke Universiteit Leuven, Leuven, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/419 (2006.01); G11C 5/06 (2006.01); H01L 25/065 (2023.01); H10B 10/00 (2023.01); H10B 80/00 (2023.01);
U.S. Cl.
CPC ...
G11C 11/419 (2013.01); G11C 5/063 (2013.01); H01L 25/0657 (2013.01); H10B 10/125 (2023.02); H10B 80/00 (2023.02); H01L 2225/06506 (2013.01);
Abstract

The disclosed 3D IC includes a plurality of vertically stacked device tiers, each device tier comprising an SRAM circuit, each SRAM circuit comprising an SRAM bit cell, wherein the bit cells are stacked on top of each other to define a stack of bit cells and wherein and each bit cell comprises first and second pass transistors, first pull-up and pull-down transistors, and second pull-up and pull-down transistors. The SRAM circuits have an identical layout and each SRAM circuit comprises: a single active layer forming an active semiconductor pattern of the transistors of the bit cell, and a single routing layer of horizontally routed conductive lines comprising a complementary pair of first and second bit lines connected to the bit cell of the SRAM circuit, gate lines defining gates of the transistors of the bit cell of the SRAM circuit, and wiring lines forming interconnections of the bit cell of the SRAM circuit.


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