The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2025

Filed:

Jun. 11, 2024
Applicants:

Chengdu Boe Optoelectronics Technology Co., Ltd., Sichuan, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Haigang Qing, Beijing, CN;

Yunsheng Xiao, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/3266 (2016.01); G09G 3/20 (2006.01); G11C 19/28 (2006.01); H10K 59/131 (2023.01); H10K 71/00 (2023.01);
U.S. Cl.
CPC ...
G09G 3/3266 (2013.01); G09G 3/2092 (2013.01); G09G 2300/0408 (2013.01); G09G 2300/0426 (2013.01); G09G 2300/0809 (2013.01); G09G 2300/0852 (2013.01); G09G 2310/0286 (2013.01); G09G 2310/08 (2013.01); G11C 19/28 (2013.01); H10K 59/131 (2023.02); H10K 71/00 (2023.02);
Abstract

A display substrate includes a substrate and a gate driving circuit provided on the substrate; the gate driving circuit includes: a frame start signal line, a clock signal line, an inverted clock signal line, a first level signal line, a second level signal line, and a plurality of shift register units. The plurality of transistors at least include a first transistor, a second transistor, and a third transistor, active layers of the first, second and third transistors are formed by a continuous first semiconductor layer, the first semiconductor layer extends along a first direction; the first semiconductor layer includes at least three channel portions corresponding to the first transistor, the second transistor and the third transistor, and a conductive portion provided between adjacent channel portions, transistors corresponding to the adjacent channel portions are coupled to each other through a corresponding conductive portion.


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