The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 29, 2025

Filed:

May. 04, 2023
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Young-In Hwang, Suwon-si, KR;

Sung Ho Kim, Suwon-si, KR;

Yong Ho Yang, Suwon-si, KR;

Seong Min Wang, Seongnam-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/3233 (2016.01); G09G 3/3258 (2016.01); H10K 59/121 (2023.01); H10K 59/131 (2023.01); H10K 77/10 (2023.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H10K 102/00 (2023.01);
U.S. Cl.
CPC ...
G09G 3/3233 (2013.01); G09G 3/3258 (2013.01); H10K 59/1213 (2023.02); H10K 59/131 (2023.02); H10K 77/111 (2023.02); G09G 2300/0819 (2013.01); G09G 2320/0257 (2013.01); H01L 27/1222 (2013.01); H01L 27/124 (2013.01); H01L 29/78648 (2013.01); H01L 29/78675 (2013.01); H10K 2102/311 (2023.02);
Abstract

An organic light emitting diode display includes a driving transistor and a compensation transistor. The driving transistor includes a first gate electrode disposed on a substrate, a polycrystalline semiconductor layer disposed on the first gate electrode of the driving transistor and including a first electrode, a second electrode, and a channel, and a second gate electrode disposed on the polycrystalline semiconductor layer of the driving transistor. The compensation transistor includes a polycrystalline semiconductor layer including a first electrode, a second electrode, and a channel, and a gate electrode disposed on the polycrystalline semiconductor layer of the compensation transistor.


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