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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12372873 B1

PDFFull Text
Date of Patent:
Jul. 29, 2025

Filed:

Nov. 28, 2023

Treatment liquid for manufacturing semiconductor, pattern forming method using the same, and method of manufacturing electronic device using the same

Applicant:

Fujifilm Corporation, Tokyo, JP;

Inventors:

Tetsuya Shimizu, Shizuoka, JP;

Tetsuya Kamimura, Shizuoka, JP;

Assignee:

FUJIFILM Corporation, Tokyo, JP;

Attorney:

JCIPRNET

Primary Examiner:

Jiong-Ping Lu

Int. Cl.
CPC ...
G03F 7/32 (2006.01); B65D 25/14 (2006.01); B65D 85/00 (2006.01); C11D 3/02 (2006.01); C11D 3/26 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); G03F 7/26 (2006.01); G03F 7/30 (2006.01); G03F 7/40 (2006.01); G03F 7/42 (2006.01); H01L 21/027 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
G03F 7/32 (2013.01); B65D 25/14 (2013.01); B65D 85/00 (2013.01); B65D 85/70 (2013.01); C11D 3/02 (2013.01); C11D 3/26 (2013.01); G03F 7/16 (2013.01); G03F 7/20 (2013.01); G03F 7/26 (2013.01); G03F 7/30 (2013.01); G03F 7/322 (2013.01); G03F 7/325 (2013.01); G03F 7/327 (2013.01); G03F 7/40 (2013.01); G03F 7/425 (2013.01); H01L 21/0271 (2013.01); H01L 21/0274 (2013.01); H01L 21/308 (2013.01); C11D 2111/22 (2024.01);
Abstract

An object of the present invention is to provide a treatment liquid for manufacturing a semiconductor, a pattern forming method using the same, and a method of manufacturing an electronic device using the same. The treatment liquid for manufacturing a semiconductor comprising: one kind or two or more kinds of metal atoms selected from Cu, Fe, and Zn, wherein a total content of particulate metal including at least one kind of the metal atoms is 0.01 to 100 mass ppt with respect to a total mass of the treatment liquid for manufacturing a semiconductor.

Find Patent Forward Citations

Shimizu, Tetsuya. (2025). Treatment liquid for manufacturing semiconductor, pattern forming method using the same, and method of manufacturing electronic device using the same (U.S. Patent No. 12372873). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12372873

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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