The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Jan. 10, 2023
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
Houssein El Dirani, Draveil, FR;
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
Abstract
In accordance with an embodiment, a method for manufacturing a semiconductor device includes forming a first front layer and a first rear layer of a first material respectively on a front main face and a rear main face of a semiconductor substrate wafer; forming a first plurality of trenches and a second plurality of trenches respectively in a surface of the first front layer and in a surface of the first rear layer; forming a second front layer of a second material on the first front layer, where the second front layer extends over the first front layer, in the first plurality of trenches, and between the first plurality of trenches on the surface of the first front layer; and forming a second rear layer of the second material on the surface of the first rear layer, wherein the second rear layer extends over the first rear layer, in the second plurality of trenches, and between the second plurality of trenches on the surface of the first rear layer.