The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Dec. 29, 2020
Applicant:
Jusung Engineering Co., Ltd., Gwangju-si, KR;
Inventors:
Assignee:
JUSUNG ENGINEERING CO., LTD., , KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/52 (2006.01); H01L 21/67 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45544 (2013.01); C23C 16/45523 (2013.01); C23C 16/45561 (2013.01); C23C 16/52 (2013.01); H01L 21/67017 (2013.01); H01L 21/0228 (2013.01); H01L 21/0262 (2013.01); H01L 21/28556 (2013.01);
Abstract
A substrate processing method which can supply gas to a plurality of process chamber through one gas supply unit, and supply different gases at the same time, thereby improving the uniformity of the thicknesses of thin films deposited in the respective chambers. The substrate processing method can perform a process in only one chamber by supplying gas to only the chamber at the same time or perform different processes in the plurality of chambers by supplying different gases to the respective chambers. Therefore, films having uniform thicknesses can be deposited in the respective chambers, and the gas supply efficiency can be improved.