The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Sep. 28, 2018
Applicant:
Japan Science and Technology Agency, Kawaguchi, JP;
Inventor:
Nagahiro Saito, Nagoya, JP;
Assignee:
Japan Science and Technology Agency, Kawaguchi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 32/182 (2017.01); C01B 32/194 (2017.01); C30B 7/14 (2006.01); C30B 29/02 (2006.01);
U.S. Cl.
CPC ...
C01B 32/194 (2017.08); C30B 7/14 (2013.01); C30B 29/02 (2013.01); C01B 2204/04 (2013.01); C01B 2204/22 (2013.01); C01P 2002/52 (2013.01); C01P 2002/72 (2013.01); C01P 2002/74 (2013.01); C01P 2002/76 (2013.01); C01P 2002/77 (2013.01); C01P 2002/78 (2013.01); C01P 2002/82 (2013.01); C01P 2002/85 (2013.01); C01P 2004/04 (2013.01); C01P 2004/61 (2013.01); C01P 2004/62 (2013.01); C01P 2004/64 (2013.01);
Abstract
Provided is a highly crystalline heteroelement-containing graphene including carbon (C) and, as a heteroelement (X), at least one element selected from the group consisting of nitrogen (N), phosphorus (P), arsenic (As), sulfur (S), boron (B), and silicon (Si). Also, spots belonging to either the orthorhombic system or the hexagonal system and having the symmetry of a single crystal are observed in the selected area electron diffraction.