The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2025
Filed:
Mar. 18, 2024
Applicant:
Stmicroelectronics S.r.l., Agrate Brianza, IT;
Inventors:
Massimo Cataldo Mazzillo, Corato, IT;
Valeria Cinnera Martino, Valverde, IT;
Assignee:
STMICROELECTRONICS S.r.l., Agrate Brianza, IT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/10 (2025.01); H10F 30/225 (2025.01); H10F 71/00 (2025.01); H10F 77/14 (2025.01);
U.S. Cl.
CPC ...
H10F 30/2255 (2025.01); H10F 39/103 (2025.01); H10F 71/00 (2025.01); H10F 77/14 (2025.01);
Abstract
In at least one embodiment, a Geiger-mode avalanche photodiode, including a semiconductor body, is provided. The semiconductor body includes a semiconductive structure and a front epitaxial layer on the semiconductive structure. The front epitaxial layer has a first conductivity type. An anode region having a second conductivity type that is different from the first conductivity type extends into the front epitaxial layer. The photodiode further includes a plurality of gettering regions in the semiconductive structure.