The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2025
Filed:
Feb. 27, 2023
Applicant:
National Yang Ming Chiao Tung University, Hsinchu, TW;
Inventors:
Edward Yi Chang, Hsinchu County, TW;
Jui-Sheng Wu, Tainan, TW;
Assignee:
NATIONAL YANG MING CHIAO TUNG UNIVERSITY, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/85 (2025.01); H10D 30/69 (2025.01); H10D 64/27 (2025.01); H10D 64/68 (2025.01);
U.S. Cl.
CPC ...
H10D 62/8503 (2025.01); H10D 30/701 (2025.01); H10D 64/513 (2025.01); H10D 64/685 (2025.01); H10D 64/689 (2025.01); H10D 64/691 (2025.01);
Abstract
A GaN transistor is provided, which comprises: a substrate; a GaN layer disposed on the substrate; a barrier layer disposed on the GaN layer; a source electrode disposed on the barrier layer; a drain electrode disposed on the barrier layer; a composite dielectric layer disposed on the barrier layer and comprising a first seed layer and a La-doped HZO layer, wherein the first seed layer comprises ZrO; and a gate electrode disposed on the composite dielectric layer.