The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2025
Filed:
Apr. 05, 2022
Mitsubishi Electric Corporation, Tokyo, JP;
Kenichi Hamano, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
An object of the present disclosure is to achieve a stable current sensing operation and suppress decrease in main current at a low temperature of 0° C. or less in a silicon carbide semiconductor device. An SiC-MOSFET includes: a main cell outputting main current; and a sense cell outputting sense current proportional to the main current, wherein temperature dependent properties of the main current differ in accordance with threshold voltage of the main cell, temperature dependent properties of the sense current differ in accordance with threshold voltage of the sense cell, the threshold voltage of the main cell is smaller than the threshold voltage of the sense cell, and in a temperature of 0° C. or less, an inclination of the temperature dependent properties of the main current is smaller than an inclination of the temperature dependent properties of the sense current.