The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 22, 2025
Filed:
Jul. 29, 2024
Mammen Thomas, Seattle, WA (US);
Mammen Thomas, Seattle, WA (US);
Abstract
Device scaling has increased the device density of integrated circuits (ICs) and reduced the cost of circuits. Today development of new device structures, use of new materials and complex process steps are implemented to continue scaling of the semiconductor devices. The added manufacturing steps and complexity have increased cost of ICs directly impacting the implementation of IoT devices that need low cost and high yields to be successful. ALEFT-ISD-LTSEE is a device that reduces the cost of manufacture while allowing scaling and improving device performance. One of the requirements of IoT devices is the ability to store data on chips designed. This requires integratable memory with the low cost of manufacture. NVM-ALEFT-ISD-LTSEE is an easily integratable non-volatile memory device that is integratable with the ALEFT-ISD-LTSEE devices with minimum additional processing. ALEFT-ISD-LTSEE with NVM-ALEFT-ISD-LTSEE is hence a suitable technology combination for the IoT devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile