The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 2025

Filed:

Aug. 30, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jaekyu Lee, Suwon-si, KR;

Kyoung Cho Na, Suwon-si, KR;

Dongseok Cho, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 25/78 (2023.01); H04N 25/60 (2023.01); H04N 25/76 (2023.01); H04N 25/772 (2023.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H04N 25/78 (2023.01); H04N 25/772 (2023.01); H04N 25/60 (2023.01); H04N 25/7795 (2023.01); H10F 39/182 (2025.01);
Abstract

Disclosed is an image sensor. Each of a plurality of pixels includes a photo diode, a transfer transistor connected between the photo diode and a floating diffusion node, a reset transistor connected between the floating diffusion node and a first power node to which a first power supply voltage is applied, a first source follower transistor including a gate connected to the floating diffusion node, a first terminal connected to a second power node to which a second power supply voltage is applied, and a second terminal connected to a first node, a precharge transistor connected between the first node and a floating node, a first precharge select transistor connected between the floating node and a ground node, a second precharge select transistor connected between the first node and a second node, and a first capacitor connected between a gate of the precharge transistor and the floating node.


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