The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 2025

Filed:

Jul. 15, 2022
Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Takakazu Hirose, Annaka, JP;

Hiromichi Kamo, Takasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/36 (2006.01); C01B 33/32 (2006.01); H01M 4/136 (2010.01); H01M 4/48 (2010.01); H01M 4/58 (2010.01); H01M 4/587 (2010.01); H01M 4/66 (2006.01); H01M 10/0525 (2010.01); H01M 10/058 (2010.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
H01M 4/364 (2013.01); C01B 33/32 (2013.01); H01M 4/136 (2013.01); H01M 4/36 (2013.01); H01M 4/48 (2013.01); H01M 4/58 (2013.01); H01M 4/5825 (2013.01); H01M 4/587 (2013.01); H01M 4/66 (2013.01); H01M 4/661 (2013.01); H01M 10/0525 (2013.01); H01M 10/058 (2013.01); C01P 2002/60 (2013.01); C01P 2002/72 (2013.01); C01P 2002/86 (2013.01); C01P 2004/61 (2013.01); C01P 2006/40 (2013.01); H01M 2004/027 (2013.01);
Abstract

A negative electrode active material comprising: particles of negative electrode active material, wherein the particles of negative electrode active material contain particles of silicon compound containing a silicon compound (SiO:0.5≤x≤1.6), and wherein the particles of silicon compound have, as chemical shift values obtained from aSi-MAS-NMR spectrum, an intensity A of a peak derived from amorphous silicon obtained in −40 to −60 ppm, an intensity B of a peak derived from silicon dioxide obtained in the vicinity of −110 ppm, and an intensity C of a peak derived from Si obtained in the vicinity of −83 ppm, which satisfy the following formula 1 and formula 2.B≤1.5×A  (1)B<C  (2)


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